B2D30065H1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.82V
Max. forward impulse current: 200A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 216W
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 519.03 грн |
| 3+ | 432.93 грн |
| 10+ | 383.08 грн |
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Технічний опис B2D30065H1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 30A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 1.82V, Max. forward impulse current: 200A, Leakage current: 15µA, Kind of package: tube, Power dissipation: 216W.