B2D30120H1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 225A
Leakage current: 38µA
Kind of package: tube
Power dissipation: 185W
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 780.35 грн |
| 3+ | 650.12 грн |
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Технічний опис B2D30120H1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 30A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 2V, Max. forward impulse current: 225A, Leakage current: 38µA, Kind of package: tube, Power dissipation: 185W.