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B2M032120Y

B2M032120Y BASiC SEMICONDUCTOR

B2M032120Y.pdf
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Mounting: THT
Pulsed drain current: 190A
Power dissipation: 375W
Gate charge: 40nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO247PLUS-4
On-state resistance: 50mΩ
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1209.88 грн
3+1015.67 грн
10+893.79 грн
30+804.25 грн
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Технічний опис B2M032120Y BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W, Mounting: THT, Pulsed drain current: 190A, Power dissipation: 375W, Gate charge: 40nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 60A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247PLUS-4, On-state resistance: 50mΩ.