B2M035120YP BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
кількість в упаковці: 1 шт
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Технічний опис B2M035120YP BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 115nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -4...18V, Pulsed drain current: 190A, Mounting: THT, Case: TO247PLUS-4, Drain-source voltage: 1.2kV, Drain current: 60A, On-state resistance: 35mΩ, Type of transistor: N-MOSFET, Power dissipation: 375W, кількість в упаковці: 1 шт.
Інші пропозиції B2M035120YP
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B2M035120YP | Виробник : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 190A Mounting: THT Case: TO247PLUS-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 375W |
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