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B2M040120H BASiC SEMICONDUCTOR

B2M040120H.pdf
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 123A; 333W
Pulsed drain current: 123A
Power dissipation: 333W
Gate charge: 90nC
Polarisation: unipolar
Technology: SiC
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO247-3
On-state resistance: 40mΩ
Mounting: THT
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Технічний опис B2M040120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 123A; 333W, Pulsed drain current: 123A, Power dissipation: 333W, Gate charge: 90nC, Polarisation: unipolar, Technology: SiC, Drain current: 48A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247-3, On-state resistance: 40mΩ, Mounting: THT.