B2M040120R BASiC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W, Pulsed drain current: 123A, Power dissipation: 238W, Gate charge: 90nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 41A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: reel; tape, Case: TO263-7, On-state resistance: 40mΩ, Mounting: SMD.