B2M065120H BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube
| Кількість | Ціна |
|---|---|
| 1+ | 770.96 грн |
| 3+ | 646.23 грн |
| 10+ | 572.38 грн |
| 30+ | 556.43 грн |
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Технічний опис B2M065120H BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Technology: SiC, Case: TO247-3, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 60nC, On-state resistance: 65mΩ, Drain current: 33A, Pulsed drain current: 85A, Power dissipation: 250W, Drain-source voltage: 1.2kV, Kind of package: tube.