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B2M065120Z

B2M065120Z BASiC SEMICONDUCTOR

B2M065120Z.pdf
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Mounting: THT
Power dissipation: 250W
Gate charge: 60nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO247-4
On-state resistance: 65mΩ
Pulsed drain current: 85A
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+891.57 грн
3+744.93 грн
10+656.05 грн
В кошику  од. на суму  грн.
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Технічний опис B2M065120Z BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Mounting: THT, Power dissipation: 250W, Gate charge: 60nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 33A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247-4, On-state resistance: 65mΩ, Pulsed drain current: 85A.