B2M065120Z BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис B2M065120Z BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 33A, Pulsed drain current: 85A, Power dissipation: 250W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 65mΩ, Mounting: THT, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції B2M065120Z
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B2M065120Z | Виробник : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 85A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
товару немає в наявності |