B2M600170H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W, Case: TO247-3, Kind of package: tube, On-state resistance: 0.6Ω, Mounting: THT, Pulsed drain current: 10A, Power dissipation: 75W, Gate charge: 14nC, Polarisation: unipolar, Technology: SiC, Drain current: 5A, Kind of channel: enhancement, Drain-source voltage: 1.7kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V.