B3M040120H BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 191.47 грн |
| 10+ | 160.18 грн |
| 30+ | 141.73 грн |
| 120+ | 127.47 грн |
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Технічний опис B3M040120H BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 40mΩ, Pulsed drain current: 124A, Power dissipation: 312W, Gate charge: 85nC, Polarisation: unipolar, Technology: SiC, Drain current: 45A, Kind of channel: enhancement.