BAS116QA147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: NOW NEXPERIA BAS116QA - RECTIFIE
Part Status: Active
Packaging: Bulk
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DFN1010D-3
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
| Кількість | Ціна |
|---|---|
| 9746+ | 2.16 грн |
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Технічний опис BAS116QA147 NXP USA Inc.
Description: NOW NEXPERIA BAS116QA - RECTIFIE, Part Status: Active, Packaging: Bulk, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DFN1010D-3, Current - Average Rectified (Io): 300mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 3 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad.