BAS16B5003 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOT23-311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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Технічний опис BAS16B5003 Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23, Current - Reverse Leakage @ Vr: 1 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Obsolete, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PG-SOT23, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BAS16B5003
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BAS 16 B5003 | Infineon Technologies |
Description: DIODE STANDARD 80V 250MA PGSOT23 Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. |
| BAS 16 B5003 | Infineon Technologies |
Diodes - General Purpose, Power, Switching Silicon Switch Diode |
товару немає в наявності |
В кошику од. на суму грн. |
| BAS 16 B5003 |
|
Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BAS 16 B5003 |
|
Виробник: Infineon Technologies
Diodes - General Purpose, Power, Switching Silicon Switch Diode
Diodes - General Purpose, Power, Switching Silicon Switch Diode
товару немає в наявності
В кошику
од. на суму грн.