BAS16W,135 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE GEN PURP 100V 175MA SOT323
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-323
Current - Average Rectified (Io): 175mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BAS16W,135 NXP USA Inc.
Description: DIODE GEN PURP 100V 175MA SOT323, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: SOT-323, Current - Average Rectified (Io): 175mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Grade: Automotive, Qualification: AEC-Q101.