BAT74V/DG115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE SCHOTTKY
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C
Supplier Device Package: SOT-666
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Part Status: Active
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 5323+ | 4.33 грн |
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Технічний опис BAT74V/DG115 NXP USA Inc.
Description: DIODE SCHOTTKY, Current - Reverse Leakage @ Vr: 2 µA @ 25 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 125°C, Supplier Device Package: SOT-666, Current - Average Rectified (Io) (per Diode): 200mA, Diode Configuration: 2 Independent, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Part Status: Active, Packaging: Bulk.