Технічний опис BAV20 A0G Taiwan Semiconductor
Description: DIODE GEN PURP 150V 200MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 150 V.
Інші пропозиції BAV20 A0G
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BAV20 A0G | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
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