BAV70QA147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE ARRAY GP 100V 175MA 3DFN
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1010D-3
Current - Average Rectified (Io) (per Diode): 175mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис BAV70QA147 NXP USA Inc.
Description: DIODE ARRAY GP 100V 175MA 3DFN, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1010D-3, Current - Average Rectified (Io) (per Diode): 175mA (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.