BAV70SRA147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: NEXPERIA BAV70 - HIGH-SPEED SWI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1412-6
Current - Average Rectified (Io) (per Diode): 355mA (DC)
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
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Технічний опис BAV70SRA147 NXP USA Inc.
Description: NEXPERIA BAV70 - HIGH-SPEED SWI, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1412-6, Current - Average Rectified (Io) (per Diode): 355mA (DC), Diode Configuration: 2 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Bulk.