BAW56/LF1235 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: 150°C
Supplier Device Package: SOT23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 215mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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Технічний опис BAW56/LF1235 NXP USA Inc.
Description: DIODE, Part Status: Active, Packaging: Bulk, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 90 V, Operating Temperature - Junction: 150°C, Supplier Device Package: SOT23-3 (TO-236), Current - Average Rectified (Io) (per Diode): 215mA, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.