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BC214L_J35Z

BC214L_J35Z onsemi

BC214L.pdf
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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Технічний опис BC214L_J35Z onsemi

Description: TRANS PNP 30V 0.5A TO92-3, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.