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BC337,112

BC337,112 NXP USA Inc.

BC817_BC817W_BC337.pdf
Виробник: NXP USA Inc.
Description: TRANS NPN 45V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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Технічний опис BC337,112 NXP USA Inc.

Description: TRANS NPN 45V 0.5A TO92-3, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.