Технічний опис BC856BE6433 INFINEON
Description: TRANS PNP 65V 0.1A SOT23, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 65 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: PG-SOT23, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BC856BE6433
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BC 856B E6433 | Виробник : Infineon Technologies |
 Description: TRANS PNP 65V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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BC 856B E6433 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
товару немає в наявності |