Технічний опис BC857B/DG/B4R NXP Semiconductors
Description: TRANS PNP 45V 0.1A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW.
Інші пропозиції BC857B/DG/B4R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BC857B/DG/B4R | Виробник : Nexperia USA Inc. |
 Description: TRANS PNP 45V 0.1A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |