BCG008 BeRex Inc
Виробник: BeRex Inc
Description: 8W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 770mA
Frequency: 26GHz
Power - Output: 8W
Gain: 9.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 60 mA
Description: 8W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 770mA
Frequency: 26GHz
Power - Output: 8W
Gain: 9.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 60 mA
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 4194.04 грн |
| 10+ | 3574.15 грн |
| 25+ | 3219.65 грн |
| 100+ | 2674.07 грн |
| 250+ | 2366.46 грн |
| 500+ | 2094.26 грн |
| 1000+ | 1906.83 грн |
Відгуки про товар
Написати відгук
Технічний опис BCG008 BeRex Inc
Description: 8W GaN power transistor, Packaging: Tray, Package / Case: Die, Current Rating (Amps): 770mA, Frequency: 26GHz, Power - Output: 8W, Gain: 9.5dB, Technology: HEMT, Supplier Device Package: Die, Part Status: Active, Voltage - Rated: 90 V, Voltage - Test: 28 V, Current - Test: 60 mA.