BCG008 BeRex Inc
Виробник: BeRex Inc
Description: 8W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 770mA
Frequency: 26GHz
Power - Output: 8W
Gain: 9.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 60 mA
Description: 8W GaN power transistor
Packaging: Tray
Package / Case: Die
Current Rating (Amps): 770mA
Frequency: 26GHz
Power - Output: 8W
Gain: 9.5dB
Technology: HEMT
Supplier Device Package: Die
Part Status: Active
Voltage - Rated: 90 V
Voltage - Test: 28 V
Current - Test: 60 mA
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 4079.02 грн |
| 10+ | 3476.13 грн |
| 25+ | 3131.35 грн |
| 100+ | 2600.73 грн |
| 250+ | 2301.56 грн |
| 500+ | 2036.82 грн |
| 1000+ | 1854.53 грн |
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Технічний опис BCG008 BeRex Inc
Description: 8W GaN power transistor, Packaging: Tray, Package / Case: Die, Current Rating (Amps): 770mA, Frequency: 26GHz, Power - Output: 8W, Gain: 9.5dB, Technology: HEMT, Supplier Device Package: Die, Part Status: Active, Voltage - Rated: 90 V, Voltage - Test: 28 V, Current - Test: 60 mA.