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BCM857DS115

BCM857DS115 NXP USA Inc.

BCM857BV_BS_DS.pdf
Виробник: NXP USA Inc.
Description: PNP/PNP MATCHED DOUBLE TRANSISTO
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 380mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
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Технічний опис BCM857DS115 NXP USA Inc.

Description: PNP/PNP MATCHED DOUBLE TRANSISTO, Part Status: Active, Supplier Device Package: 6-TSOP, Frequency - Transition: 175MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Current - Collector (Ic) (Max): 100mA, Power - Max: 380mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual) Matched Pair, Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Bulk.