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BCW 66H E6327

BCW 66H E6327 Infineon Technologies

fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.8A PG-SOT23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
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Мінімальне замовлення: 42000 шт
В кошику  од. на суму  грн.
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Технічний опис BCW 66H E6327 Infineon Technologies

Description: TRANS NPN 45V 0.8A PG-SOT23, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA.