Технічний опис BDP949E6327HTSA1 Infineon Technologies
Description: TRANS NPN 60V 3A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4-10, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 5 W.
Інші пропозиції BDP949E6327HTSA1
| Фото | Назва | Виробник | Інформація |
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BDP949E6327HTSA1 | Виробник : Infineon Technologies |
 Description: TRANS NPN 60V 3A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W |
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BDP949E6327HTSA1 | Виробник : Infineon Technologies |
Description: TRANS NPN 60V 3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W |
товар відсутній |