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BF1105WR,115

BF1105WR,115 NXP USA Inc.

BF1105_R_WR.pdf
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Supplier Device Package: CMPAK-4
Noise Figure: 1.7dB
Technology: MOSFET (Metal Oxide)
Gain: 20dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Voltage - Test: 5 V
Voltage - Rated: 7 V
Part Status: Obsolete
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Технічний опис BF1105WR,115 NXP USA Inc.

Description: RF MOSFET 5V CMPAK-4, Supplier Device Package: CMPAK-4, Noise Figure: 1.7dB, Technology: MOSFET (Metal Oxide), Gain: 20dB, Configuration: N-Channel Dual Gate, Frequency: 800MHz, Mounting Type: Surface Mount, Current Rating (Amps): 30mA, Package / Case: SC-82A, SOT-343, Packaging: Tape & Reel (TR), Voltage - Test: 5 V, Voltage - Rated: 7 V, Part Status: Obsolete.