BF821/DG/B2215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Active
Packaging: Bulk
Qualification: AEC-Q101
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 50 mA
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
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Технічний опис BF821/DG/B2215 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Part Status: Active, Packaging: Bulk, Qualification: AEC-Q101, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 50 mA, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V.