Технічний опис BFG540W/XR,135 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ CMPAK-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 120mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz, Supplier Device Package: CMPAK-4, Part Status: Obsolete.
Інші пропозиції BFG540W/XR,135
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BFG540W/XR,135 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 9GHZ CMPAK-4Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Supplier Device Package: CMPAK-4 Part Status: Obsolete |
товару немає в наявності |
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BFG540W/XR,135 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ CMPAK-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Supplier Device Package: CMPAK-4 Part Status: Obsolete |
товару немає в наявності |