Технічний опис BFP 540FESD E6327 Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 20dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V, Frequency - Transition: 30GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.
Інші пропозиції BFP 540FESD E6327
| Фото | Назва | Виробник | Інформація |
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BFP540FESDE6327 | Виробник : Infineon Technologies |
 Description: RF TRANS NPN 5V 30GHZ 4-TSFPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
товару немає в наявності |