BFP 640FESD E6327

BFP 640FESD E6327 Infineon Technologies


Part_Number_Guide_Web.pdf Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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Технічний опис BFP 640FESD E6327 Infineon Technologies

Description: RF TRANS NPN 4.7V 46GHZ 4TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Gain: 8B ~ 30.5dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V, Frequency - Transition: 46GHz, Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.