BFP 650F E6327 Infineon Technologies
Виробник: Infineon TechnologiesDescription: RF TRANS NPN 4.5V 42GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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Технічний опис BFP 650F E6327 Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB ~ 21.5dB, Power - Max: 500mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.
Інші пропозиції BFP 650F E6327
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BFP 650F E6327 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 4.5V 42GHZ 4TSFP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB ~ 21.5dB Power - Max: 500mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
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