BFP196WE6327HTSA1

BFP196WE6327HTSA1 Infineon Technologies


bfp196w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114267ecec60628 Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис BFP196WE6327HTSA1 Infineon Technologies

Description: RF TRANS NPN 12V 7.5GHZ SOT343-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12.5dB ~ 19dB, Power - Max: 700mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V, Frequency - Transition: 7.5GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT343-3D, Part Status: Obsolete.