BFQ19SH6359XTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: BFQ19S - RF SMALL SIGNAL BIPOLAR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT89-4-2
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Технічний опис BFQ19SH6359XTMA1 Infineon Technologies
Description: BFQ19S - RF SMALL SIGNAL BIPOLAR, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.5dB, Power - Max: 1W, Current - Collector (Ic) (Max): 120mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V, Frequency - Transition: 5.5GHz, Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz, Supplier Device Package: PG-SOT89-4-2.