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BFR93A215

BFR93A215 NXP USA Inc.

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Виробник: NXP USA Inc.
Description: RF BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-23 (TO-236AB)
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Frequency - Transition: 6GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 35mA
Power - Max: 300mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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Технічний опис BFR93A215 NXP USA Inc.

Description: RF BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Supplier Device Package: SOT-23 (TO-236AB), Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz, Frequency - Transition: 6GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 35mA, Power - Max: 300mW, Operating Temperature: 175°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.