BFU530W,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: NPN WIDEBAND SILICON RF TRANSIST
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 12.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 433MHz ~ 1.8GHz
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1809 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1214+ | 17.95 грн |
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Технічний опис BFU530W,115 NXP USA Inc.
Description: NPN WIDEBAND SILICON RF TRANSIST, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -40°C ~ 150°C (TJ), Gain: 12.5dB, Power - Max: 450mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V, Frequency - Transition: 11GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 433MHz ~ 1.8GHz, Supplier Device Package: SC-70, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.