BFY193PZZZA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: RF TRANS NPN 12V 7.5GHZ MICRO-X1
Packaging: Box
Package / Case: MICRO-X1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Supplier Device Package: MICRO-X1
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Технічний опис BFY193PZZZA1 Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1, Packaging: Box, Package / Case: MICRO-X1, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 12.5dB ~ 13.5dB, Power - Max: 580mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V, Frequency - Transition: 7.5GHz, Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz, Supplier Device Package: MICRO-X1.