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BGH75N120HF1

BGH75N120HF1 BASiC SEMICONDUCTOR

BGH75N120HF1.pdf
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
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термін постачання 14-30 дні (днів)
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Технічний опис BGH75N120HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Mounting: THT, Kind of package: tube, Turn-on time: 140ns, Gate charge: 398nC, Turn-off time: 443ns, Collector current: 75A, Gate-emitter voltage: ±20V, Power dissipation: 568W, Pulsed collector current: 200A, Collector-emitter voltage: 1.2kV, Technology: Field Stop; SiC SBD; Trench, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Case: TO247-3.