BGH75N120HF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис BGH75N120HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Mounting: THT, Type of transistor: IGBT, Power dissipation: 568W, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 398nC, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Collector-emitter voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 200A, Turn-on time: 140ns, Turn-off time: 443ns, кількість в упаковці: 1 шт.
Інші пропозиції BGH75N120HF1
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BGH75N120HF1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 568W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 398nC Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 200A Turn-on time: 140ns Turn-off time: 443ns |
товару немає в наявності |