BGH75N120HF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
кількість в упаковці: 1 шт
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Технічний опис BGH75N120HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Mounting: THT, Kind of package: tube, Turn-on time: 140ns, Gate charge: 398nC, Turn-off time: 443ns, Collector current: 75A, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Power dissipation: 568W, Collector-emitter voltage: 1.2kV, Technology: Field Stop; SiC SBD; Trench, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Case: TO247-3, кількість в упаковці: 1 шт.
Інші пропозиції BGH75N120HF1
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BGH75N120HF1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Mounting: THT Kind of package: tube Turn-on time: 140ns Gate charge: 398nC Turn-off time: 443ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 568W Collector-emitter voltage: 1.2kV Technology: Field Stop; SiC SBD; Trench Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 |
товару немає в наявності |