BGH75N65HF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BGH75N65HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 405W, Case: TO247-3, Mounting: THT, Gate charge: 444nC, Kind of package: tube, Turn-off time: 376ns, Turn-on time: 104ns, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 75A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Collector-emitter voltage: 650V, кількість в упаковці: 1 шт.
Інші пропозиції BGH75N65HF1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BGH75N65HF1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-3 Mounting: THT Gate charge: 444nC Kind of package: tube Turn-off time: 376ns Turn-on time: 104ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
товару немає в наявності |