BGH75N65HF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BGH75N65HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Mounting: THT, Kind of package: tube, Power dissipation: 405W, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 444nC, Collector-emitter voltage: 650V, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 300A, Turn-on time: 104ns, Turn-off time: 376ns, кількість в упаковці: 1 шт.
Інші пропозиції BGH75N65HF1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BGH75N65HF1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 405W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 444nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 104ns Turn-off time: 376ns |
товару немає в наявності |