BGH75N65ZF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1012.55 грн |
| 5+ | 843.21 грн |
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Технічний опис BGH75N65ZF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Case: TO247-4, Mounting: THT, Kind of package: tube, Pulsed collector current: 300A, Turn-on time: 84ns, Turn-off time: 565ns, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 650V, Power dissipation: 405W, Gate charge: 444nC, Features of semiconductor devices: integrated anti-parallel diode.