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BLP7G22-10,135 NXP USA Inc.

BLP7G22-10.pdf
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V 12HVSON
Current - Test: 110 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: 12-HVSON (4x6)
Technology: LDMOS
Gain: 27dB
Power - Output: 2W
Frequency: 700MHz ~ 2.2GHz
Mounting Type: Surface Mount
Package / Case: 12-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис BLP7G22-10,135 NXP USA Inc.

Description: RF MOSFET LDMOS 28V 12HVSON, Current - Test: 110 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Supplier Device Package: 12-HVSON (4x6), Technology: LDMOS, Gain: 27dB, Power - Output: 2W, Frequency: 700MHz ~ 2.2GHz, Mounting Type: Surface Mount, Package / Case: 12-VDFN Exposed Pad, Packaging: Tape & Reel (TR).