Технічний опис BSC020N025SG INF
Description: MOSFET N-CH 25V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V.
Інші пропозиції BSC020N025SG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BSC020N025S G | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP |
товару немає в наявності |
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BSC020N025S G | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 30A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2V @ 110µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V |
товару немає в наявності |