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BSC130P03LSGAUMA1 Infineon Technologies

Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A/22.5A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V

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Технічний опис BSC130P03LSGAUMA1 Infineon Technologies

Description: MOSFET P-CH 30V 12A/22.5A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 150µA, Supplier Device Package: PG-TDSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V.

Інші пропозиції BSC130P03LSGAUMA1

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	BSC130P03LSGAUMA1	Виробник : Infineon Technologies	Description: MOSFET P-CH 30V 12A/22.5A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 150µA Supplier Device Package: PG-TDSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V	товару немає в наявності	В кошику од. на суму грн.