Технічний опис BSC886N03LSG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Інші пропозиції BSC886N03LSG за ціною від 19.60 грн до 19.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
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BSC886N03LS G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETGate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC886N03LS G | Infineon Technologies |
MOSFET N-Ch 30V 65A TDSON-8 |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BSC886N03LS G |
|
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1205+ | 19.60 грн |
| BSC886N03LS G |
|
Виробник: Infineon Technologies
MOSFET N-Ch 30V 65A TDSON-8
MOSFET N-Ch 30V 65A TDSON-8
на замовлення 33 шт:
термін постачання 21-30 дні (днів)