Технічний опис BSD235CL6327 Infineon technologies
Description: MOSFET N/P-CH 20V SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA, Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V, Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 1.6µA, Supplier Device Package: PG-SOT363-PO.
Інші пропозиції BSD235CL6327
| Фото | Назва | Виробник | Інформація |
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BSD235C L6327 | Виробник : Infineon Technologies |
 Description: MOSFET N/P-CH 20V SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Supplier Device Package: PG-SOT363-PO |
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BSD235C L6327 | Виробник : Infineon Technologies |
Description: MOSFET N/P-CH 20V SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Supplier Device Package: PG-SOT363-PO |
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