BSL202SNL6327HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
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Технічний опис BSL202SNL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 30µA, Supplier Device Package: PG-TSOP6-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V.