BSL215P L6327

BSL215P L6327 Infineon Technologies


bsl215p_rev2.1.pdffolderiddb3a304314dca38901154a7313d21a66fileiddb3a30431add1d95011aed3344c3025.pdf Виробник: Infineon Technologies
Trans MOSFET P-CH 20V 1.5A Automotive 6-Pin TSOP T/R
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Технічний опис BSL215P L6327 Infineon Technologies

Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 11µA, Supplier Device Package: PG-TSOP6-6.

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BSL215PL6327 BSL215PL6327 Виробник : Infineon Technologies INFNS16735-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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