BSM100GB170DN2HOSA1 Infineon Technologies


BSM_100_GB_170_DN2.pdf Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
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Технічний опис BSM100GB170DN2HOSA1 Infineon Technologies

Description: IGBT MOD 1700V 145A 1000W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 16 nF @ 25 V.