Технічний опис BSM200GB120DLCHOSA1 Infineon Technologies
Description: IGBT MOD 1200V 420A 1550W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 420 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1550 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Інші пропозиції BSM200GB120DLCHOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BSM200GB120DLCHOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 420A 1550W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
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