BSM25GP120B2BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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Технічний опис BSM25GP120B2BOSA1 Infineon Technologies
Description: IGBT MODULE 1200V, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Full Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 230 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V.